Journal Article

PreJuSER-53326

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Photoluminescence and Intrinsic Properties of MBE-Grown InN Nanowires

Stoica, T.FZJ* ; Meijers, R.FZJ* ; Calarco, R.FZJ* ; Richter, T.FZJ* ; Sutter, E. ; Lüth, H.FZJ*

2006
ACS Publ. Washington, DC

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Please use a persistent id in citations: http://hdl.handle.net/2128/2043  doi:10.1021/nl060547x

Abstract: The influence of the growth parameters on the photoluminescence (PL) spectra has been investigated for samples with columnar morphology, either with InN columns on original substrates or as free-standing nanowires. Valuable information about band gap and electron concentration was obtained by line shape analysis. Optical band gaps between 730 and 750 meV and electron concentrations of 8 x 10(17) to 6 x 10(18) cm(-3) were derived from the fit of the PL spectra of different samples. The crystalline quality of the wires was investigated by high-resolution transmission electron microscopy.

Keyword(s): Indium: chemistry (MeSH) ; Luminescence (MeSH) ; Microscopy, Electron: methods (MeSH) ; Nanostructures: chemistry (MeSH) ; Nitrogen: chemistry (MeSH) ; Photochemistry (MeSH) ; indium nitride ; Indium ; Nitrogen ; J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Halbleiterschichten und Bauelemente (ISG-1)
2. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2006

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Database coverage:

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