Journal Article

PreJuSER-57679

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Spontaneous 2D Accumulation of Charged Be Dopants in GaAs p-n Superlattices

Landrock, S.FZJ* ; Urban, K.FZJ* ; Ebert, P.FZJ*

2006
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/7711  doi:10.1103/PhysRevLett.96.076101

Abstract: In a classical view, abrupt dopant profiles in semiconductors tend to be smoothed out by diffusion due to concentration gradients and repulsive screened Coulomb interactions between the charged dopants. We demonstrate, however, using cross-sectional scanning tunneling microscopy and secondary ion mass spectroscopy, that charged Be dopant atoms in GaAs p-n superlattices spontaneously accumulate and form two-dimensional dopant layers. These are stabilized by reduced repulsive screened Coulomb interactions between the charged dopants arising from the two-dimensional quantum mechanical confinement of charge carriers.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Mikrostrukturforschung (IFF-IMF)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)
2. Kondensierte Materie (P54)

Appears in the scientific report 2006
Notes: Nachtrag

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