On the origin of bistable resistive switching in metal organic charge transfer complex memory cells

Kever, T.; Schindler, C.; Böttger, U.; Waser, R.

doi:10.1063/1.2772191

Journal Article

PreJuSER-58103

On the origin of bistable resistive switching in metal organic charge transfer complex memory cells

Kever, T. ; Böttger, U. ; Schindler, C.FZJ* ; Waser, R.FZJ*

2007
American Institute of Physics Melville, NY

Applied physics letters 91, 083506 (2007) [10.1063/1.2772191]

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Please use a persistent id in citations: http://hdl.handle.net/2128/17994 doi:10.1063/1.2772191

Abstract: Electrical characteristics of Cu:tetracyanoquinodimethane (TCNQ) devices with different electrodes were studied. The comparison of impedance spectroscopic measurements on devices with Al and Pt top electrodes proved the existence of a high resistive interface layer between Cu:TCNQ and Al. An equivalent circuit was modeled and the resulting values suggest that the interface layer is composed of naturally formed aluminum oxide. Devices with deliberately formed aluminum oxide and without Cu:TCNQ were fabricated and revealed a similar behavior. The authors propose that the switching effect in Cu:TCNQ thin film devices is a Cu ion based electrochemical effect occurring in a thin aluminum oxide layer. (C) 2007 American Institute of Physics.

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