Journal Article

PreJuSER-58708

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Symmetry breaking in the growth of two-dimensional islands on Si(111)

Romanyuk, K.FZJ* ; Cherepanov, V.FZJ* ; Voigtländer, B.FZJ*

2007
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/7739  doi:10.1103/PhysRevLett.99.126103

Abstract: We find that the shape of two-dimensional (2D) Si or Ge islands has a lower symmetry than the threefold symmetry of the underlying Si(111) substrate if Bi is used as a surfactant during growth. Arrow-shaped or rhomb-shaped 2D islands are observed by scanning tunneling microscopy. This symmetry breaking is explained by a mutual shift between the surface reconstructions present on the substrate and on the islands. Using the kinematic Wulff construction the growth velocities of the steps could be determined from the island shape if the nucleation center has been located by a marker technique.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Grenz- und Oberflächen (IBN-3)
2. Center of Nanoelectronic Systems for Information Technology (CNI)
3. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2007

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