Journal Article

PreJuSER-59028

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Thin Films of HfO2 for High-k Gate Oxide Applications from Engineered Alkoxide- and Amide-Based MOCVD Precursors

Thomas, R.FZJ* ; Rije, E.FZJ* ; Ehrhart, P.FZJ* ; Milanov, A. ; Bhakta, R. ; Baunemann, A. ; Devi, A. ; Fischer, R. ; Waser, R.FZJ*

2007
Electrochemical Society Pennington, NJ

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Please use a persistent id in citations: doi:10.1149/1.2431324

Abstract: HfO2 thin films with thickness between 2 and 20 nm were grown by liquid injection metallorganic chemical vapor deposition, LI-MOCVD, on SiOx/Si (100) substrates. Different mononuclear precursors ([Hf(OPri)(2)(tbaoac)(2)], [Hf(NEt2)(2)(guanid)(2)], and [Hf(OBut)(2)(dmae)(2)] were tested in combination with different solvents. Growth rate, surface morphology, crystal structure, and crystal density of the as-deposited films were analyzed as a function of deposition temperature. The influence of postdeposition annealing on the densification and crystallization was studied. Correlation of the structural properties with the electrical properties of metal insulator semiconductor capacitors with Pt top electrodes is discussed. Fully silicided metal gate stacks are additionally discussed for selected samples. (c) 2007 The Electrochemical Society.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2007

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