SmScO3 thin films as an alternative gate dielectric

Durgun Özben, E.; Jia, Y.; Schlom, D. G.; Lopes, J. M. J.; Schubert, J.; Holländer, B.; Mantl, S.; Lenk, S.; Roeckerath, M.

doi:10.1063/1.2968660

Journal Article

SmScO3 thin films as an alternative gate dielectric

Durgun Özben, E.FZJ* ; Lopes, J. M. J.FZJ* ; Roeckerath, M.FZJ* ; Lenk, S.FZJ* ; Holländer, B.FZJ* ; Jia, Y. ; Schlom, D. G. ; Schubert, J.FZJ* ; Mantl, S.FZJ*

2008
American Institute of Physics Melville, NY

Applied physics letters 93, 052902-1 - 052902-3 (2008) [10.1063/1.2968660]

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Please use a persistent id in citations: http://hdl.handle.net/2128/17367 doi:10.1063/1.2968660

Abstract: Samarium scandate thin films deposited on (100) Si have been investigated structurally and electrically. Rutherford backscattering spectrometry and transmission electron microscopy results show that the films are stoichiometric, amorphous, and smooth. X-ray diffraction analysis indicates that SmScO3 starts to crystallize at 900 degrees C. Capacitance and leakage current measurements reveal C-V curves with negligible hysteresis, a dielectric constant around 29 for 6 nm thick films, low leakage current densities in the range of 10(-7) A/cm(2), an effective oxide charge density of similar to 5x10(11) cm(-2), and an interface trap density of 4.5x10(11) (eV cm(2))(-1). (C) 2008 American Institute of Physics.

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