Journal Article

FZJ-2016-02102

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png High-temperature piezoresistive C / SiOC sensors

Roth, F. (Corresponding author) ; Schmerbauch, C. ; Ionescu, E. ; Nicoloso, N. ; Guillon, O.FZJ* ; Riedel, R.

2015
Copernicus Publ. Göttingen

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Please use a persistent id in citations: http://hdl.handle.net/2128/10026  doi:10.5194/jsss-4-133-2015

Abstract: Here we report on the high-temperature piezoresistivity of carbon-containing silicon oxycarbide nanocomposites (C / SiOC). Samples containing 13.5 vol% segregated carbon have been prepared from a polysilsesquioxane via thermal cross-linking, pyrolysis and subsequent hot-pressing. Their electrical resistance was assessed as a function of the mechanical load (1–10 MPa) and temperature (1000–1200 °C). The piezoresistive behavior of the C / SiOC nanocomposites relies on the presence of dispersed nanocrystalline graphite with a lateral size ≤ 2 nm and non-crystalline carbon domains, as revealed by Raman spectroscopy. In comparison to highly ordered carbon (graphene, HOPG), C / SiOC exhibits strongly enhanced k factor values, even upon operation at temperatures beyond 1000 °C. The measured k values of about 80 ± 20 at the highest temperature reading (T = 1200 °C) reveal that C / SiOC is a primary candidate for high-temperature piezoresistive sensors with high sensitivity.

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Contributing Institute(s):

1. Werkstoffsynthese und Herstellungsverfahren (IEK-1)
2. JARA-ENERGY (JARA-ENERGY)

Research Program(s):

1. 113 - Methods and Concepts for Material Development (POF3-113) (POF3-113)

Appears in the scientific report 2016

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