Journal Article

FZJ-2016-02139

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Structural and Electronic Properties of Nitrogen-Doped Graphene

Sforzini, J.FZJ* ; Hapala, P. ; Franke, M.FZJ* ; van Straaten, G.FZJ* ; Stöhr, A. ; Link, S. ; Soubatch, S. ; Jelínek, P. ; Lee, T.-L. ; Starke, U. ; Švec, M. ; Bocquet, F.  C. (Corresponding author) ; Tautz, F. S.FZJ*

2016
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/10074  doi:10.1103/PhysRevLett.116.126805

Abstract: We investigate the structural and electronic properties of nitrogen-doped epitaxial monolayer graphene and quasifreestanding monolayer graphene on 6H−SiC(0001) by the normal incidence x-ray standing wave technique and by angle-resolved photoelectron spectroscopy supported by density functional theory simulations. With the location of various nitrogen species uniquely identified, we observe that for the same doping procedure, the graphene support, consisting of substrate and interface, strongly influences the structural as well as the electronic properties of the resulting doped graphene layer. Compared to epitaxial graphene, quasifreestanding graphene is found to contain fewer nitrogen dopants. However, this lack of dopants is compensated by the proximity of nitrogen atoms at the interface that yield a similar number of charge carriers in graphene.

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Contributing Institute(s):

1. Funktionale Nanostrukturen an Oberflächen (PGI-3)

Research Program(s):

1. 142 - Controlling Spin-Based Phenomena (POF3-142) (POF3-142)

Appears in the scientific report 2016

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Database coverage:
; ; ; Current Contents - Physical, Chemical and Earth Sciences ; IF >= 5 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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