Journal Article

FZJ-2016-04067

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Impact of Tunnel-Barrier Strength on Magnetoresistance in Carbon Nanotubes

Morgan, C.FZJ* ; Misiorny, M.FZJ* ; Metten, D.FZJ* ; Heedt, S.FZJ* ; Schäpers, T.FZJ* ; Schneider, C. M.FZJ* ; Meyer, C. (Corresponding author)FZJ*

2016
American Physical Society College Park, Md. [u.a.]

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Please use a persistent id in citations: http://hdl.handle.net/2128/11986  doi:10.1103/PhysRevApplied.5.054010

Abstract: We investigate magnetoresistance in spin valves involving CoPd-contacted carbon nanotubes. Both thetemperature and bias-voltage dependence clearly indicate tunneling magnetoresistance as the origin. Weshow that this effect is significantly affected by the tunnel-barrier strength, which appears to be one reasonfor the variation between devices previously detected in similar structures. Modeling the data by means ofthe scattering matrix approach, we find a nontrivial dependence of the magnetoresistance on the barrierstrength. Furthermore, an analysis of the spin precession observed in a nonlocal Hanle measurement yieldsa spin lifetime of tau_s= 1.1 ns, a value comparable with those found in silicon- or graphene-based spin-valvedevices.

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Contributing Institute(s):

1. Elektronische Eigenschaften (PGI-6)
2. Halbleiter-Nanoelektronik (PGI-9)
3. Theoretische Nanoelektronik (PGI-2)
4. JARA-FIT (JARA-FIT)

Research Program(s):

1. 522 - Controlling Spin-Based Phenomena (POF3-522) (POF3-522)

Appears in the scientific report 2016

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Database coverage:
; ; ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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