Strain and compositional fluctuations in Al$_{0.81}$In$_{0.19}$N/GaN heterostructures

Portz, V.; Ebert, Ph.; Carlin, J.-F.; Schnedler, M.; Grandjean, N.; Hsiao, F.-M.; Duchamp, M.; Eisele, H.; Butté, R.; Dunin-Borkowski, R. E.

doi:10.1063/1.4963184

Journal Article

FZJ-2016-06369

Strain and compositional fluctuations in Al$_{0.81}$In$_{0.19}$N/GaN heterostructures

Portz, V.FZJ* ; Schnedler, M.FZJ* ; Duchamp, M. ; Hsiao, F.-M. ; Eisele, H. ; Carlin, J.-F. ; Butté, R. ; Grandjean, N. ; Dunin-Borkowski, R. E.FZJ* ; Ebert, P.FZJ*

2016
American Inst. of Physics Melville, NY

Applied physics letters 109(13), 132102 - (2016) [10.1063/1.4963184]

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Please use a persistent id in citations: http://hdl.handle.net/2128/17241 doi:10.1063/1.4963184

Abstract: The strain and compositional fluctuations of nearly lattice-matched Al0.81In0.19N/GaN heterostructures are investigated by cross-sectional scanning tunneling microscopy and selected area electron diffraction measurements in scanning electron transmission microscopy. The presence of strain induces height modulations governed by different roughness components at the cleavage surfaces. The surface height modulations are compatible with a relaxation of alternatingly compressive and tensile strained domains, indicating compositional fluctuations. Changes of the a lattice constant are traced to interface misfit edge dislocations. The dislocations induce steps increasing the roughness within the Al0.81In0.19N layers.

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