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| Hauptseite > Publikationsdatenbank > Current mirrors with strained Si single nanowire gate all around Schottky barrier MOSFETs |
| Hauptseite > Publikationsdatenbank > Current mirrors with strained Si single nanowire gate all around Schottky barrier MOSFETs |
| Contribution to a conference proceedings/Contribution to a book | FZJ-2016-06425 |
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2016
IEEE
[Piscataway, NJ]
ISBN: 978-1-4673-8609-8
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Please use a persistent id in citations: doi:10.1109/ULIS.2016.7440082
Abstract: In this work, we present a simple current mirror based on two single nanowire strained silicon Schottky barrier (SB) MOSFETs with gate-all-around (GAA) structure. B+ implantation into NiSi2 with dopant segregation at source and drain was used to decrease the Schottky barrier height for holes at the metal/channel junctions. The current mirror shows a very good Mirror Ratio MR = 0.99 and high output resistance of 100MΩ.
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