Contribution to a conference proceedings

FZJ-2017-00561

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices

Fleck, K. ; Bottger, U. ; Waser, R.FZJ* ; Aslam, N. ; Hoffmann-Eifert, S.FZJ* ; Menzel, S.FZJ*

2016
IEEE

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Please use a persistent id in citations: doi:10.1109/ESSDERC.2016.7599611

Abstract: Resistive random access memories based on redox phenomena (ReRAM) combine several advantages. Beside their good scalability, high endurance and fast switching speed they are also very energy efficient. This work presents a study of the SET kinetics of SrTiO3-based resistive switches covering the timescale from <;10 ns up to 104 s. The power-dependence of the SET kinetics and the switching energy are analyzed. It is found that there is a minimum energy that is necessary for switching at a certain time furthermore it is found that devices that otherwise behave very differently have the same minimum switching energies. The experimental findings are discussed theoretically using a 2D axisymmeric finite element simulation model. Based on the simulation results design guidelines to minimize the minimum switching energy are derived.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA Institut Green IT (PGI-10)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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