InGaN mesoscopic structures for low energy consumption nano-opto-electronics

Luth, H.; Mikulics, M.; Trellenkamp, St.; Hardtdegen, H.; Sofer, Z.; Winden, A.; Grutzmacher, D.; Marso, M.

doi:10.1109/ASDAM.2016.7805897

Contribution to a conference proceedings

FZJ-2017-00839

InGaN mesoscopic structures for low energy consumption nano-opto-electronics

Luth, H.FZJ* ; Mikulics, M. (Corresponding author)FZJ* ; Winden, A.FZJ* ; Trellenkamp, S.PGI-8-PT* ; Sofer, Z. ; Marso, M. ; Grutzmacher, D.FZJ* ; Hardtdegen, H.FZJ*

2016
IEEE

2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), Smolenice, Slovakia, 13 Nov 2016 - 16 Nov 2016 IEEE 69-72 (2016) [10.1109/ASDAM.2016.7805897]

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Abstract: Nano-LEDs based on mesoscopic structures are the key elements for future energy saving nano-opto-electronics as well as for fast and highly secure optical communication. We present first results using a vertical device layout in which nano-LED emitters based on InGaN mesoscopic structures deposited by metalorganic vapor phase epitaxy (MOVPE) were implemented. The nano-LEDs were integrated in a vertical device layout without degradation of their optical and electrical properties. The results presented demonstrate the great promise of the novel device concept and integration technology for low energy consumption nano-opto-electronics operated in the telecommunication wavelength range.

Note: ISBN 978-1-5090-3083-5

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