Journal Article

FZJ-2017-01276

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Towards defect-free epitaxial CdTe and MgCdTe layers grown on InSb (001) substrates

Lu, J. (Corresponding author) ; DiNezza, M. J. ; Zhao, X.-H. ; Liu, S. ; Zhang, Y.-H. ; Kovacs, A.FZJ* ; Dunin-Borkowski, R.FZJ* ; Smith, D. J.

2016
Elsevier Amsterdam [u.a.]

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Please use a persistent id in citations: doi:10.1016/j.jcrysgro.2016.01.015

Abstract: A series of three CdTe/MgxCd1−xTe (x~0.24) double heterostructures grown by molecular beam epitaxy on InSb (001) substrates at temperatures in the range of 235–295 °C have been studied using conventional and advanced electron microscopy techniques. Defect analysis based on bright-field electron micrographs indicates that the structure grown at 265 °C has the best structural quality of the series, while structures grown at 30 °C lower or higher temperature show highly defective morphology. Geometric phase analysis of the CdTe/InSb interface for the sample grown at 265 °C reveals minimal interfacial elastic strain, and there is no visible evidence of interfacial defect formation in aberration-corrected electron micrographs of this particular sample. Such high quality CdTe epitaxial layers should provide the basis for applications such as photo-detectors and multi-junction solar cells.

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Contributing Institute(s):

1. Mikrostrukturforschung (PGI-5)
2. Physik Nanoskaliger Systeme (ER-C-1)

Research Program(s):

1. 143 - Controlling Configuration-Based Phenomena (POF3-143) (POF3-143)

Appears in the scientific report 2016

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Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF < 5 ; JCR ; NCBI Molecular Biology Database ; Nationallizenz ; No Authors Fulltext ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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