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@ARTICLE{Mao:827783,
      author       = {Mao, Y. and Engels, J. and Houben, A. and Rasinski, M. and
                      Steffens, Jonathan and Terra, A. and Linsmeier, Ch. and
                      Coenen, J. W.},
      title        = {{T}he influence of annealing on yttrium oxide thin film
                      deposited by reactive magnetron sputtering: {P}rocess and
                      microstructure},
      journal      = {Nuclear materials and energy},
      volume       = {10},
      issn         = {2352-1791},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {FZJ-2017-01887},
      pages        = {1 - 8},
      year         = {2017},
      abstract     = {Yttrium oxide thin films were prepared by reactive
                      magnetron sputtering in different deposition condition with
                      various oxygen flow rates. The annealing influence on the
                      yttrium oxide film microstructure is investigated. The
                      oxygen flow shows a hysteresis behavior on the deposition
                      rate. With a low oxygen flow rate, the so called metallic
                      mode process with a high deposition rate (up to 1.4 µm/h)
                      was achieved, while with a high oxygen flow rate, the
                      process was considered to be in the poisoned mode with an
                      extremely low deposition rate (around 20 nm/h). X-ray
                      diffraction (XRD) results show that the yttrium oxide films
                      that were produced in the metallic mode represent a mixture
                      of different crystal structures including the metastable
                      monoclinic phase and the stable cubic phase, while the
                      poisoned mode products show a dominating monoclinic phase.
                      The thin films prepared in metallic mode have relatively
                      dense structures with less porosity. Annealing at 600 °C
                      for 15 h, as a structure stabilizing process, caused a phase
                      transformation that changes the metastable monoclinic phase
                      to stable cubic phase for both poisoned mode and metallic
                      mode. The composition of yttrium oxide thin films changed
                      from nonstoichiometric to stoichiometric together with a
                      lattice parameter variation during annealing process. For
                      the metallic mode deposition however, cracks were formed due
                      to the thermal expansion coefficient difference between thin
                      film and the substrate material which was not seen in
                      poisoned mode deposition. The yttrium oxide thin films that
                      deposited in different modes give various application
                      options as a nuclear material.},
      cin          = {IEK-4},
      ddc          = {333.7},
      cid          = {I:(DE-Juel1)IEK-4-20101013},
      pnm          = {173 - Fusion Related Technology and Materials Research
                      (POF3-173) / HITEC - Helmholtz Interdisciplinary Doctoral
                      Training in Energy and Climate Research (HITEC)
                      (HITEC-20170406)},
      pid          = {G:(DE-HGF)POF3-173 / G:(DE-Juel1)HITEC-20170406},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000398974100001},
      doi          = {10.1016/j.nme.2016.12.031},
      url          = {https://juser.fz-juelich.de/record/827783},
}