The influence of annealing on yttrium oxide thin film deposited by reactive magnetron sputtering: Process and microstructure

Mao, Y.; Coenen, J. W.; Linsmeier, Ch.; Terra, A.; Steffens, Jonathan; Houben, A.; Engels, J.; Rasinski, M.

doi:10.1016/j.nme.2016.12.031

Journal Article

FZJ-2017-01887

The influence of annealing on yttrium oxide thin film deposited by reactive magnetron sputtering: Process and microstructure

Mao, Y. (Corresponding author)FZJ* ; Engels, J.FZJ* ; Houben, A.FZJ* ; Rasinski, M.FZJ* ; Steffens, J. ; Terra, A.FZJ* ; Linsmeier, C.FZJ* ; Coenen, J. W.FZJ*

2017
Elsevier Amsterdam [u.a.]

Nuclear materials and energy 10, 1 - 8 (2017) [10.1016/j.nme.2016.12.031]

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Please use a persistent id in citations: http://hdl.handle.net/2128/15280 doi:10.1016/j.nme.2016.12.031

Abstract: Yttrium oxide thin films were prepared by reactive magnetron sputtering in different deposition condition with various oxygen flow rates. The annealing influence on the yttrium oxide film microstructure is investigated. The oxygen flow shows a hysteresis behavior on the deposition rate. With a low oxygen flow rate, the so called metallic mode process with a high deposition rate (up to 1.4 µm/h) was achieved, while with a high oxygen flow rate, the process was considered to be in the poisoned mode with an extremely low deposition rate (around 20 nm/h). X-ray diffraction (XRD) results show that the yttrium oxide films that were produced in the metallic mode represent a mixture of different crystal structures including the metastable monoclinic phase and the stable cubic phase, while the poisoned mode products show a dominating monoclinic phase. The thin films prepared in metallic mode have relatively dense structures with less porosity. Annealing at 600 °C for 15 h, as a structure stabilizing process, caused a phase transformation that changes the metastable monoclinic phase to stable cubic phase for both poisoned mode and metallic mode. The composition of yttrium oxide thin films changed from nonstoichiometric to stoichiometric together with a lattice parameter variation during annealing process. For the metallic mode deposition however, cracks were formed due to the thermal expansion coefficient difference between thin film and the substrate material which was not seen in poisoned mode deposition. The yttrium oxide thin films that deposited in different modes give various application options as a nuclear material.

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