Journal Article

FZJ-2017-02573

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Interplay between nanometer-scale strain variations and externally applied strain in graphene

Verbiest, G. J. (Corresponding author)RWTH* ; Stampfer, C.FZJ* ; Huber, S. E. ; Andersen, M. ; Reuter, K.

2016
Inst. Woodbury, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/14105  doi:10.1103/PhysRevB.93.195438

Abstract: We present a molecular modeling study analyzing nanometer-scale strain variations in graphene as a function of externally applied tensile strain. We consider two different mechanisms that could underlie nanometer-scale strain variations: static perturbations from lattice imperfections of an underlying substrate and thermal fluctuations. For both cases we observe a decrease in the out-of-plane atomic displacements with increasing strain, which is accompanied by an increase in the in-plane displacements. Reflecting the nonlinear elastic properties of graphene, both trends together yield a nonmonotonic variation of the total displacements with increasing tensile strain. This variation allows us to test the role of nanometer-scale strain variations in limiting the carrier mobility of high-quality graphene samples.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2017

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Database coverage:
; ; ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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