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Journal Article | FZJ-2017-02573 |
; ; ; ;
2016
Inst.
Woodbury, NY
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Please use a persistent id in citations: http://hdl.handle.net/2128/14105 doi:10.1103/PhysRevB.93.195438
Abstract: We present a molecular modeling study analyzing nanometer-scale strain variations in graphene as a function of externally applied tensile strain. We consider two different mechanisms that could underlie nanometer-scale strain variations: static perturbations from lattice imperfections of an underlying substrate and thermal fluctuations. For both cases we observe a decrease in the out-of-plane atomic displacements with increasing strain, which is accompanied by an increase in the in-plane displacements. Reflecting the nonlinear elastic properties of graphene, both trends together yield a nonmonotonic variation of the total displacements with increasing tensile strain. This variation allows us to test the role of nanometer-scale strain variations in limiting the carrier mobility of high-quality graphene samples.
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