Journal Article

FZJ-2017-04032

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png A first-principles DFT+ GW study of spin-filter and spin-gapless semiconducting Heusler compounds

Tas, M. ; Şaşıoğlu, E. ; Friedrich, C.FZJ* ; Galanakis, I. (Corresponding author)

2017
North-Holland Publ. Co. Amsterdam

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Please use a persistent id in citations: http://hdl.handle.net/2128/22949  doi:10.1016/j.jmmm.2017.05.062

Abstract: Among Heusler compounds, the ones being magnetic semiconductors (also known as spin-filter materials) are widely studied as they offer novel functionalities in spintronic and magnetoelectronic devices. The spin-gapless semiconductors are a special case. They possess a zero or almost-zero energy gap in one of the two spin channels. We employ the GW approximation to simulate the electronic band structure of these materials. Our results suggest that in most cases the use of GW self energy instead of the usual density functionals is important to accurately determine the electronic properties of magnetic semiconductors

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Contributing Institute(s):

1. Quanten-Theorie der Materialien (IAS-1)
2. Quanten-Theorie der Materialien (PGI-1)
3. JARA-FIT (JARA-FIT)
4. JARA - HPC (JARA-HPC)

Research Program(s):

1. 142 - Controlling Spin-Based Phenomena (POF3-142) (POF3-142)
2. 143 - Controlling Configuration-Based Phenomena (POF3-143) (POF3-143)

Appears in the scientific report 2017

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Database coverage:
; ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF < 5 ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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