Journal Article

FZJ-2018-03735

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Electron affinity and surface states of GaN m -plane facets: Implication for electronic self-passivation

Portz, V.FZJ* ; Schnedler, M.FZJ* ; Eisele, H. ; Dunin-Borkowski, R.FZJ* ; Ebert, P. (Corresponding author)FZJ*

2018
Inst. Woodbury, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/19115  doi:10.1103/PhysRevB.97.115433

Abstract: The electron affinity and surface states are of utmost importance for designing the potential landscape within (heterojunction) nanowires and hence for tuning conductivity and carrier lifetimes. Therefore, we determined for stoichiometric nonpolar GaN(10¯10) m-plane facets, i.e., the dominating sidewalls of GaN nanowires, the electron affinity to 4.06±0.07eV and the energy of the empty Ga-derived surface state in the band gap to 0.99±0.08eV below the conduction band minimum using scanning tunneling spectroscopy. These values imply that the potential landscape within GaN nanowires is defined by a surface state-induced Fermi-level pinning, creating an upward band bending at the sidewall facets, which provides an electronic passivation.

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Contributing Institute(s):

1. Mikrostrukturforschung (PGI-5)
2. Physik Nanoskaliger Systeme (ER-C-1)

Research Program(s):

1. 141 - Controlling Electron Charge-Based Phenomena (POF3-141) (POF3-141)

Appears in the scientific report 2018

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Database coverage:
; ; ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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