Contribution to a conference proceedings/Contribution to a book

FZJ-2019-00014

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Gate stack and Ni(SiGeSn) metal contacts formation on low bandgap strained (Si)Ge(Sn) semiconductors

Buca, D. (Corresponding author)FZJ* ; Schulte-Braucks, C.FZJ* ; von den Driesch, N.FZJ* ; Tiedemann, A.FZJ* ; Breuer, U.FZJ* ; Hartmann, J. M. ; Zaumseil, P. ; Mantl, S.FZJ* ; Zhao, Q. T.FZJ*

2018
IEEE

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Please use a persistent id in citations: doi:10.1109/IWJT.2018.8330309

Abstract: GeSn is a promising material to make the most of two worlds [1]: (i) its direct bandgap for high Sn contents yields high-mobility and decent optical properties; (ii) as a CMOS compatible material, it benefits from the maturity of group IV semiconductor ultra-large scale integration. However the benefit of high carrier mobility in MOSFETs or direct bandgap in tunnel-FETs can only be used in combination with a high quality, scaled and low defective gate oxide and metallic contacts. In this work, we report on (i) the fabrication and characterization of MOS capacitors on high-Sn-content direct bandgap GeSn alloys and (ii) the formation of metallic contacts with low resistivity. We will also briefly discuss the Schottky barrier tuning by dopant segregation during Ni-stano-germanidation.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2018

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