Journal Article

FZJ-2019-00015

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Silicon tunnel FET with average subthreshold slope of 55 mV/dec at low drain currents

Narimani, K. (Corresponding author)FZJ* ; Glass, S.FZJ* ; Bernardy, P.FZJ* ; von den Driesch, N.FZJ* ; Zhao, Q. T.FZJ* ; Mantl, S.FZJ*

2018
Pergamon, Elsevier Science Oxford [u.a.]

This record in other databases:  

Please use a persistent id in citations: doi:10.1016/j.sse.2018.01.007

Abstract: In this paper we present a silicon tunnel FET based on line-tunneling to achieve better subthreshold performance. The fabricated device shows an on-current of Ion = 2.55 × 10−7 A/µm at Vds = Von = Vgs − Voff = −0.5 V for an Ioff = 1 nA/µm and an average SS of 55 mV/dec over two orders of magnitude of Id. Furthermore, the analog figures of merit have been calculated and show that the transconductance efficiency gm/Id beats the MOSFET performance at low currents.

---

Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2018

---

Database coverage:
; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF < 5 ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Web of Science Core Collection

---