Contribution to a conference proceedings/Contribution to a book

FZJ-2019-00019

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Examination of a new SiGe/Si heterostructure TFET concept based on vertical tunneling

Glass, S. (Corresponding author) ; Schulte-Braucks, C. ; Kibkalo, L.FZJ* ; Breuer, U.FZJ* ; Hartmann, J. M. ; Buca, D.FZJ* ; Mantl, S.FZJ* ; Zhao, Q. T.FZJ*

2017
IEEE

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Please use a persistent id in citations: doi:10.1109/E3S.2017.8246169

Abstract: This paper presents a Tunneling Field Effect Transistor concept with a vertical SiGe/Si hetero tunneling junction utilizing a design which promotes line tunneling in a source-gate overlap region. By contrast, the influence of parasitic point tunneling is marginal in the structure, resulting in a sharp turn-on. We show that the growth of a suitable layer stack and manufacturing a device is perfectly feasible and provide first electrical measurements serving as a proof of concept. The route to enhancing the performance by scaling device dimensions and adjusting the channel doping is examined by means of TCAD simulations.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Analytik (ZEA-3)

Research Program(s):

1. 141 - Controlling Electron Charge-Based Phenomena (POF3-141) (POF3-141)

Appears in the scientific report 2018

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