Journal Article

FZJ-2019-00662

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Impact of tensile strain on low Sn content GeSn lasing

Rainko, D. (Corresponding author)FZJ* ; Ikonic, Z. ; Elbaz, A. ; von den Driesch, N.FZJ* ; Stange, D.FZJ* ; Herth, E. ; Boucaud, P. ; El Kurdi, M. ; Grützmacher, D.FZJ* ; Buca, D. M.FZJ*

2019
Macmillan Publishers Limited, part of Springer Nature [London]

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Please use a persistent id in citations: http://hdl.handle.net/2128/21408  doi:10.1038/s41598-018-36837-8

Abstract: In recent years much effort has been made to increase the Sn content in GeSn alloys in order to increasedirect bandgap charge carrier recombination and, therefore, to reach room temperature lasing.While being successful for the former, the increase of Sn content is detrimental, leading to increaseddefect concentrations and a lower thermal budget regarding processing. In this work we demonstratestrong photoluminescence enhancement in low Sn content Ge0.94Sn0.06 layers by implementing tensilestrain. Fitting of the calculated photoluminescence spectra to reproduce our experimental resultsindicates a strain of ~1.45%, induced via an SiNx stressor layer, which is strong enough to transform theinvestigated layer into a direct bandgap semiconductor. Moreover, theoretical calculations, using the8-band k·p model, show the advantages of using low Sn content tensile strained GeSn layers in respectto gain and lasing temperature. We show that low Sn content GeSn alloys have a strong potential toenable efficient room temperature lasers on electronic-photonic integrated circuits.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)
3. JARA Institut Green IT (PGI-10)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2019

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