Home > Publications database > Synthesis, structure, and electrical behavior of Sr4Bi4Ti7O24 |
Journal Article | PreJuSER-8826 |
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2010
American Institute of Physics
Melville, NY
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Please use a persistent id in citations: http://hdl.handle.net/2128/17228 doi:10.1063/1.3273388
Abstract: An n=7 Aurivillius phase, Sr4Bi4Ti7O24, with c=6.44 nm, was synthesized as an epitaxial (001)-oriented film. This phase and its purity were confirmed by x-ray diffraction and transmission electron microscopy. The material is ferroelectric, with a P-r=5.3 mu C/cm(2) oriented in the (001) plane and a paraelectric-to-ferroelectric transition temperature of T-C=324 K. Some indications of relaxorlike behavior are observed. Such behavior is out of character for Srn-1Bi2TinO3n+3 Aurivillius phases and is closer to the bulk behavior of doped SrTiO3, implying a spatial limit to the elastic interlayer interactions in these layered oxides. A finite-element solution to the interpretation of data from interdigitated capacitors on thin films is also described.
Keyword(s): J ; bismuth compounds (auto) ; epitaxial layers (auto) ; ferroelectric capacitors (auto) ; ferroelectric thin films (auto) ; ferroelectric transitions (auto) ; finite element analysis (auto) ; insulating thin films (auto) ; relaxor ferroelectrics (auto) ; strontium compounds (auto) ; transmission electron microscopy (auto) ; X-ray diffraction (auto)
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