Journal Article

FZJ-2020-04067

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Carrier lifetime of GeSn measured by spectrally resolved picosecond photoluminescence spectroscopy

Julsgaard, B. (Corresponding author) ; von den Driesch, N.FZJ* ; Tidemand-Lichtenberg, P. ; Pedersen, C. ; Ikonic, Z. ; Buca, D.FZJ*

2020
OSA Washington, DC

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Please use a persistent id in citations: http://hdl.handle.net/2128/25922  doi:10.1364/PRJ.385096

Abstract: We present an experimental setup capable of time-resolved photoluminescence spectroscopy for photon energies in the range of 0.51 to 0.56 eV with an instrument time response of 75 ps. The detection system is based on optical parametric three-wave mixing, operates at room temperature, has spectral resolving power, and is shown to be well suited for investigating dynamical processes in germanium-tin alloys. In particular, the carrier lifetime of a direct-bandgap Ge1−𝑥Sn𝑥 film with concentration 𝑥=12.5% and biaxial strain −0.55% is determined to be 217±15  ps at a temperature of 20 K. A room-temperature investigation indicates that the variation in this lifetime with temperature is very modest. The characteristics of the photoluminescence as a function of pump fluence are discussed.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA Institut Green IT (PGI-10)
3. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2020

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Database coverage:
; ; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Essential Science Indicators ; IF >= 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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