Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors

Roeckerath, M.; Jia, Y.; Schlom, D.G.; Urban, C.; Lopes, J. M. J.; Schubert, J.; Mantl, S.; Durgun Özben, E.

doi:10.1063/1.3275731

Journal Article

Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors

Roeckerath, M.FZJ* ; Lopes, J. M. J.FZJ* ; Durgun Özben, E.FZJ* ; Urban, C.FZJ* ; Schubert, J.FZJ* ; Mantl, S.FZJ* ; Jia, Y. ; Schlom, D. G.

2010
American Institute of Physics Melville, NY

Applied physics letters 96, 013513 (2010) [10.1063/1.3275731]

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Please use a persistent id in citations: http://hdl.handle.net/2128/17378 doi:10.1063/1.3275731

Abstract: Terbium scandate thin films were deposited by e-gun evaporation on (100) silicon substrates. Rutherford backscattering spectrometry and x-ray diffraction studies revealed homogeneous chemical compositions of the films. A dielectric constant of 26 and CV-curves with small hystereses were measured as well as low leakage current densities of < 1 nA/cm(2). Fully depleted n-type field-effect transistors on thin silicon-on-insulator substrates with terbium scandate gate dielectrics were fabricated with a gate-last process. The devices show inverse subthreshold slopes of 80 mV/dec and a carrier mobility for electrons of 225 cm(2)/V center dot s was extracted.

Keyword(s): J ; dielectric hysteresis (auto) ; dielectric thin films (auto) ; electron mobility (auto) ; insulated gate field effect transistors (auto) ; permittivity (auto) ; Rutherford backscattering (auto) ; terbium compounds (auto) ; vacuum deposition (auto) ; X-ray diffraction (auto)