A vertical resonant tunneling transistor for application in digital logic circuits

Stock, J.; Indlekofer, K.-M.; Pöttgens, M.; Förster, A.; Lüth, H.; Malindretos, J.

doi:10.1109/16.925221

Journal Article

PreJuSER-40404

A vertical resonant tunneling transistor for application in digital logic circuits

Stock, J.FZJ* ; Malindretos, J.FZJ* ; Indlekofer, K.-M.FZJ* ; Pöttgens, M. ; Förster, A.FZJ* ; Lüth, H.FZJ*

2001

IEEE Transactions on Electron Devices 48, 1028 (2001) [10.1109/16.925221]

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Please use a persistent id in citations: http://hdl.handle.net/2128/1990 doi:10.1109/16.925221

Abstract: A vertical resonant tunneling transistor (VRTT) has been developed, its properties and its application in digital logic circuits based on the monostable-bistable transition logic element (MOBILE) principle are described. The device consists of a small mesa resonant tunneling diode (RTD) in the GaAs/AlAs material system surrounded by a Schottky gate. We obtain low peak voltages using InGaAs in the quantum well and the devices show an excellent peak current control by means of an applied gate voltage. A self latching inverter circuit has been fabricated using two VRTTs and the switching functionality was demonstrated at low frequencies.

Keyword(s): J ; monostable-bistable transition logic element (MOBILE) (auto) ; monostable-to-bistable transition (auto) ; resonant tunneling diode (RTD) (auto) ; resonant tunneling transistor (auto)