Journal Article

FZJ-2023-03757

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Correlation between Electronic Structure, Microstructure, and Switching Mode in Valence Change Mechanism Al 2 O 3 /TiO x ‐Based Memristive Devices

Aussen, S.FZJ* ; Cüppers, F.FZJ* ; Funck, C.FZJ* ; Jo, J.FZJ* ; Werner, S. ; Pratsch, C. ; Menzel, S.FZJ* ; Dittmann, R.FZJ* ; Dunin-Borkowski, R.FZJ* ; Waser, R.FZJ* ; Hoffmann-Eifert, S. (Corresponding author)FZJ*

2023
Wiley-VCH Verlag GmbH & Co. KG Weinheim

This record in other databases:  

Please use a persistent id in citations: doi:10.1002/aelm.202300520  doi:10.34734/FZJ-2023-03757

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA-FIT (JARA-FIT)
3. Physik Nanoskaliger Systeme (ER-C-1)
4. JARA Institut Green IT (PGI-10)

Research Program(s):

1. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)
2. BMBF 16ME0399 - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0399) (BMBF-16ME0399)
3. BMBF 16ME0398K - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0398K) (BMBF-16ME0398K)

Appears in the scientific report 2023

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Database coverage:
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