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| Home > Workflow collections > Publication Charges > Insights into the Si─H Bonding Configuration at the Amorphous/Crystalline Silicon Interface of Silicon Heterojunction Solar Cells by Raman and FTIR Spectroscopy |
| Home > Workflow collections > Publication Charges > Insights into the Si─H Bonding Configuration at the Amorphous/Crystalline Silicon Interface of Silicon Heterojunction Solar Cells by Raman and FTIR Spectroscopy |
| Journal Article | FZJ-2023-03953 |
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2023
Wiley-VCH
Weinheim
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Please use a persistent id in citations: doi:10.1002/adma.202306351 doi:10.34734/FZJ-2023-03953
Abstract: In silicon heterojunction solar cell technology, thin layers of hydrogenated amorphous silicon (a-Si:H) are applied as passivating contacts to the crystalline silicon (c-Si) wafer. Thus, the properties of the a-Si:H is crucial for the performance of the solar cells. One important property of a-Si:H is its microstructure which can be characterized by the microstructure parameter R based on Si─H bond stretching vibrations. A common method to determine R is Fourier transform infrared (FTIR) absorption measurement which, however, is difficult to perform on solar cells for various reasons like the use of textured Si wafers and the presence of conducting oxide contact layers. Here, it is demonstrated that Raman spectroscopy is suitable to determine the microstructure of bulk a-Si:H layers of 10 nm or less on textured c-Si underneath indium tin oxide as conducting oxide. A detailed comparison of FTIR and Raman spectra is performed and significant differences in the microstructure parameter are obtained by both methods with decreasing a-Si:H film thickness.
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