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| Hauptseite > Publikationsdatenbank > Doped HfO x Nanoclusters: Polar and Resistive Switching in the Smallest Functional Units |
| Hauptseite > Publikationsdatenbank > Doped HfO x Nanoclusters: Polar and Resistive Switching in the Smallest Functional Units |
| Journal Article | FZJ-2023-05502 |
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2024
Wiley-VCH
Weinheim
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Please use a persistent id in citations: doi:10.1002/pssa.202300404 doi:10.34734/FZJ-2023-05502
Abstract: In the study presented in this article, the impact of proton doping on the structuraland electronic properties of hafnium oxide nanoclusters is investigated, with afocus on their potential for use in resistive and polar switching devices. In theresults, it is shown that the incorporation of protons can stabilize the cage-likecrystalline structures of Hf6Oxclusters, leading to reversible changes in electronicproperties by varying oxygen stoichiometry. However, the full coverage of hafniaatoms by hydrogen removes in-gap states, highlighting the importance of con-trolled moisture content in redox-based memristive devices and neuromorphicunits. In addition, in this study, the polar properties of these clusters are explored,illustrating possible polar switching in metastable pure Hf6O9, low-barrier anti-ferroelectric-like switching in carbon-stabilized Hf6O9∶C, and low-barrier polarswitching in Hf10O15∶C. In thesefindings, the potential of HfOxclusters isrevealed as active components for next-generation high-capacity nonvolatileelectronic memory and beyond von Neumann computing in sub-nanometer scale.
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