Abstract

FZJ-2024-01219

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Synapses with homo/hetero-synaptic plasticity enabled by ferroelectric polarization modulated Schottky diodes

Grenmyr, A. (First author)FZJ* ; Zhang, J.FZJ* ; Xi, F.FZJ* ; Wiefels, S.FZJ* ; Grützmacher, D.FZJ* ; Zhao, Q.-T.FZJ*

2023

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Please use a persistent id in citations: doi:10.34734/FZJ-2024-01219

Abstract: Several recently proposed synapses suffer from limited linearity or constrained means of weight adjustment, which can be overcome by incorporating additional modulating terminals. In this study, we explore the use of ferroelectric Schottky transistors (FE-SBFETs) with either a single or dual gate, which exhibit excellent linearity and demonstrate the potential of the second gate terminal for modulation. The incorporation of multiple gates can enable more sophisticated control of the synapse, resulting in greater flexibility for tuning the synaptic weight. The demonstrated high linearity is critical for precise and accurate weight adjustment, as it allows for a larger number of distinguishable conductive states. Therefore, the incorporation of multiple gates and input terminals represents a promising direction for developing more versatile and high-performance neuromorphic devices.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Elektronische Materialien (PGI-7)
3. JARA Institut Green IT (PGI-10)

Research Program(s):

1. 5234 - Emerging NC Architectures (POF4-523) (POF4-523)

Appears in the scientific report 2023

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Database coverage:

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