Hauptseite > Publikationsdatenbank > Analytical modelling of the transport in analog filamentary conductive-metal-oxide/HfO x ReRAM devices |
Journal Article | FZJ-2024-02291 |
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2024
Royal Society of Chemistry
Cambridge
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Please use a persistent id in citations: doi:10.1039/D4NH00072B doi:10.34734/FZJ-2024-02291
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