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| Hauptseite > Publikationsdatenbank > Combining unsupervised and supervised learning in microscopy enables defect analysis of a full 4H-SiC wafer |
| Hauptseite > Publikationsdatenbank > Combining unsupervised and supervised learning in microscopy enables defect analysis of a full 4H-SiC wafer |
| Journal Article | FZJ-2024-03488 |
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2024
Springer
Berlin
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Please use a persistent id in citations: doi:10.1557/s43579-024-00563-2 doi:10.34734/FZJ-2024-03488
Abstract: Detecting and analyzing various defect types in semiconductor materials is an important prerequisite for understanding the underlying mechanisms and tailoring the production processes. Analysis of microscopy images that reveal defects typically requires image analysis tasks such as segmentation and object detection. With the permanently increasing amount of data from experiments, handling these tasks manually becomes more and more impossible. In this work, we combine various image analysis and data mining techniques to create a robust and accurate, automated image analysis pipeline for extracting the type and position of all defects in a microscopy image of a KOH-etched 4H-SiC wafer.
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