Journal Article

FZJ-2024-06709

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors

Seidel, L. ; Liu, T.FZJ* ; Concepción, O.FZJ* ; Marzban, B.RWTH* ; Kiyek, V.FZJ* ; Spirito, D. ; Schwarz, D. ; Benkhelifa, A. ; Schulze, J. ; Ikonic, Z. ; Hartmann, J.-M.Extern* ; Chelnokov, A. ; Witzens, J. ; Capellini, G. ; Oehme, M. ; Grützmacher, D.FZJ* ; Buca, D. (Corresponding author)FZJ*

2024
Nature Publishing Group UK [London]

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Please use a persistent id in citations: doi:10.1038/s41467-024-54873-z  doi:10.34734/FZJ-2024-06709

Abstract: Over the last 30 years, group-IV semiconductors have been intensely investigated in the quest for a fundamental direct bandgap semiconductor that could yield the last missing piece of the Si Photonics toolbox: a continuous-wave Si-based laser. Along this path, it has been demonstrated that the electronic band structure of the GeSn/SiGeSn heterostructures can be tuned into a direct bandgap quantum structure providing optical gain for lasing. In this paper, we present a versatile electrically pumped, continuous-wave laser emitting at a near-infrared wavelength of 2.32 µm with a low threshold current of 4 mA. It is based on a 6-periods SiGeSn/GeSn multiple quantum-well heterostructure. Operation of the micro-disk laser at liquid nitrogen temperature is possible by changing to pulsed operation and reducing the heat load. The demonstration of a continuous-wave, electrically pumped, all-group-IV laser is a major breakthrough towards a complete group-IV photonics technology platform.

Keyword(s): Information and Communication (1st) ; Condensed Matter Physics (2nd)

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 5234 - Emerging NC Architectures (POF4-523) (POF4-523)
2. DFG project G:(GEPRIS)299480227 - SiGeSn Laser für die Silizium Photonik (299480227) (299480227)

Appears in the scientific report 2024

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