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| Hauptseite > Publikationsdatenbank > High-speed and energy-efficient non-volatile silicon photonic memory based on heterogeneously integrated memresonator |
| Hauptseite > Publikationsdatenbank > High-speed and energy-efficient non-volatile silicon photonic memory based on heterogeneously integrated memresonator |
| Journal Article | FZJ-2025-01706 |
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2024
Springer Nature
[London]
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Please use a persistent id in citations: doi:10.1038/s41467-024-44773-7 doi:10.34734/FZJ-2025-01706
Abstract: Recently, interest in programmable photonics integrated circuits has grown as a potential hardware framework for deep neural networks, quantum computing, and field programmable arrays (FPGAs). However, these circuits are constrained by the limited tuning speed and large power consumption of the phase shifters used. In this paper, we introduce the memresonator, a metal-oxide memristor heterogeneously integrated with a microring resonator, as a non-volatile silicon photonic phase shifter. These devices are capable of retention times of 12 hours, switching voltages lower than 5 V, and an endurance of 1000 switching cycles. Also, these memresonators have been switched using 300 ps long voltage pulses with a record low switching energy of 0.15 pJ. Furthermore, these memresonators are fabricated on a heterogeneous III-V-on-Si platform capable of integrating a rich family of active and passive optoelectronic devices directly on-chip to enable in-memory photonic computing and further advance the scalability of integrated photonic processors.
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