Journal Article

FZJ-2025-02987

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Reversible switching of the environment-protected quantum spin Hall insulator bismuthene at the graphene/SiC interface

Tilgner, N. (First author) ; Wolff, S. ; Soubatch, S.FZJ* ; Lee, T.-L. ; Peña Unigarro, A. D. ; Gemming, S. ; Tautz, F. S.FZJ* ; Seyller, T. ; Kumpf, C. (Corresponding author)FZJ* ; Göhler, F. (Corresponding author) ; Schädlich, P. (Corresponding author)

2025
Springer Nature [London]

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Please use a persistent id in citations: doi:10.1038/s41467-025-60440-x  doi:10.34734/FZJ-2025-02987

Abstract: Quantum spin Hall insulators have been extensively studied both theoretically and experimentally because they exhibit robust helical edge states driven by spin-orbit coupling and offer the potential for applications in spintronics through dissipationless spin transport. Here we show that a single layer of elemental Bi, formed by intercalation of an epitaxial graphene buffer layer on SiC(0001), is a promising candidate for a quantum spin Hall insulator. This layer can be reversibly switched between an electronically inactive precursor state and a bismuthene state, the latter exhibiting the predicted band structure of a true two-dimensional bismuthene layer. Switching is accomplished by hydrogenation (dehydrogenation) of the sample. A partial passivation (activation) of Si dangling bonds causes a lateral shift of Bi atoms involving a change of the adsorption site. In the bismuthene state, the Bi honeycomb layer is a prospective quantum spin Hall insulator, inherently protected by the graphene sheet above and the H-passivated substrate below.

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Contributing Institute(s):

1. Quantum Nanoscience (PGI-3)

Research Program(s):

1. 5213 - Quantum Nanoscience (POF4-521) (POF4-521)
2. DFG project G:(GEPRIS)449119662 - FOR 5242: Proximity induzierte Korrelationseffekte in niedrigdimensionalen Strukturen (449119662) (449119662)
3. SFB 1083 A12 - Struktur und Anregungen von hetero-epitaktischen Schichtsystemen aus schwach wechselwirkenden 2D-Materialien und molekularen Schichten (A12) (385975694) (385975694)

Appears in the scientific report 2025

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