Conference Presentation (Other)

FZJ-2026-01505

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png CSiGeSn Epitaxy: Future Isovalent Isomorphism in Group-IV Materials

Devaiya, A. J.FZJ* ; Concepcion, O.FZJ* ; Fischer, T. ; Tiedemann, A.FZJ* ; Capellini, G. ; Mathur, S. ; Grützmacher, D.FZJ* ; Buca, D. (Corresponding author)FZJ*

2025

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Please use a persistent id in citations: doi:10.34734/FZJ-2026-01505

Abstract: Group-IV materials constitute the foundational platform for advancing silicon-based photonics, spintronic, and energy technologies.[1] Recent breakthrough in the field includes the demonstration of continues-wave electrically pumped lasing based on advanced (Si)GeSn/GeSn MQWs.[2] Theoretical calculations predicts that the C substitution into Ge lattice even enhance the directness of band gap leading to laser performance improvement.[3] In this study, we address the growth aspects of ternary and quaternary Group-IV alloys, in comparison with GeSn epitaxy, which serve as benchmark. Additionally, an unconventional carbon precursor - CBr4 is introduced and its chemical influence on onset Sn alloying for CGeSn alloys is presented. Later, the Si induce defect engineering to compensate the effect of C alloying on strain relaxation in diamond cubic lattice during (Si)GeSn epitaxy is studied.

Keyword(s): Basic research (1st) ; Chemistry (2nd)

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 5234 - Emerging NC Architectures (POF4-523) (POF4-523)
2. LASTSTEP - group-IV LASer and deTectors on Si-TEchnology Platform (101070208) (101070208)

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