Journal Article

FZJ-2026-04207

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Two Coexisting Pathways to Volatility in Valence‐Change Memory Devices

Hellwig, J. ; Wittberg, C. ; Spithouris, D.FZJ* ; Dittmann, R.FZJ*

2026
Wiley-VCH Weinheim

This record in other databases:  

Please use a persistent id in citations: doi:10.1002/adfm.77515

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)
2. MANIC - Materials for Neuromorphic Circuits (861153) (861153)
3. DFG project G:(GEPRIS)441959088 - Memristiver Zeitabstandskodierer (MemTDE) (441959088) (441959088)
4. DFG project G:(GEPRIS)422738993 - SPP 2262: Memristive Bauelemente für intelligente technische Systeme (422738993) (422738993)
5. DFG project G:(GEPRIS)528378584 - TRR 404: Zukunftsweisende Elektronik durch aktive Bauelemente in drei Dimensionen (Active-3D) (528378584) (528378584)

Appears in the scientific report 2026

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Database coverage:
; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; DEAL Wiley ; Ebsco Academic Search ; Essential Science Indicators ; IF >= 15 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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