Journal Article PreJuSER-111841

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Mechanism of contact resistance formation in ohmic contacts with high dislocation density

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2012
American Institute of Physics Melville, NY

Journal of applied physics 111, 083701 () [10.1063/1.3702850]

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Abstract: A new mechanism of contact resistance formation in ohmic contacts with high dislocation density is proposed. Its specific feature is the appearance of a characteristic region where the contact resistance increases with temperature. According to the mechanism revealed, the current flowing through the metal shunts associated with dislocations is determined by electron diffusion. It is shown that current flows through the semiconductor near-surface regions where electrons accumulate. A feature of the mechanism is the realization of ohmic contact irrespective of the relation between the contact and bulk resistances. The theory is proved for contacts formed to III-V semiconductor materials as well as silicon-based materials. A reasonable agreement between theory and experimental results is obtained. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3702850]

Keyword(s): J

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Note: The authors at ISP acknowledge financial support from the National Academy of Sciences of Ukraine (program "Fundamental problems of nanostructured systems, nanomaterials and nanotechnology") and State program of Ukraine "Nanotechnology and nanomaterials."

Contributing Institute(s):
  1. Bioelektronik (ICS-8)
  2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
  3. Bioelektronik (PGI-8)
Research Program(s):
  1. Grundlagen für zukünftige Informationstechnologien (P42)
  2. BioSoft: Makromolekulare Systeme und biologische Informationsverarbeitung (P45)

Appears in the scientific report 2012
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Medline ; OpenAccess by Allianz-OA ; OpenAccess ; Allianz-Lizenz / DFG ; Current Contents - Social and Behavioral Sciences ; JCR ; NationallizenzNationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection
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Institute Collections > IBI > IBI-3
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ICS > ICS-8
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PGI-8

 Record created 2012-11-16, last modified 2024-06-19


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