Gast ::
| Hauptseite > Publikationsdatenbank > Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source |
| Hauptseite > Publikationsdatenbank > Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source |
| Journal Article | PreJuSER-111885 |
; ; ; ; ; ; ; ; ; ;
2012
Pergamon, Elsevier Science
Oxford [u.a.]
This record in other databases: 
Please use a persistent id in citations: doi:10.1016/j.sse.2012.04.018
Abstract: We report on n-channel tunneling field-effect transistors (TFET) with a tensile strained Si channel and a compressively strained Si0.5Ge0 5 source. The device shows good performance with an average subthreshold swing S of 80 mV/dec over a drain current range of more than 3 orders of magnitude. We observed that the on-current increases exponentially with the back gate voltage. At a back gate voltage of 8 V. the on-current was enhanced by a factor of 1.6. The back gate also improves the on/off current ratio. Low temperature measurements show a slightly temperature dependent S. characteristic for a tunneling dominated device. (c) 2012 Elsevier Ltd. All rights reserved.
Keyword(s): J ; Tunnel FET (auto) ; Strained Si (auto) ; Subthreshold swing (auto) ; SiGe (auto)
; Current Contents - Life Sciences ; Current Contents - Physical, Chemical and Earth Sciences ; JCR ; Nationallizenz
; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection
|
The record appears in these collections: |