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Conference Presentation PreJuSER-11561
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High mobility strained SOI MOSFETs with LaScO3/TiN gate stacks fabricated with a replacement gate process

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2010

11thb International Conference on Ultimate Integratuin on Silicon (ULIS)
Seminar, Glasgow, ScotlandGlasgow, Scotland, 18 Mar 20102010-03-18


Note: Record converted from VDB: 12.11.2012
Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (IBN-1)
  2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
Research Program(s):
  1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2010
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Document types > Presentations > Conference Presentations
JARA > JARA > JARA-JARA\-FIT
Institute Collections > PGI > PGI-9
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 Record created 2012-11-13, last modified 2018-02-08
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