Journal Article

FZJ-2013-03155

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories

Cho, D.-Y. (Corresponding author) ; Tappertzhofen, S. ; Waser, R. ; Valov, I.FZJ*

2013
Nature Publishing Group London

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Please use a persistent id in citations: http://hdl.handle.net/2128/5219  doi:10.1038/srep01169

Abstract: AgI nanoionics-based resistive switching memories were studied in respect to chemical stability of the Ag/AgI interface using x-ray absorption spectroscopy. The apparent dissolution of Ag films of thickness below some tens of nanometers and the loss of electrode/electrolyte contact was critically addressed. The results evidently show that there are no chemical interactions at the interface despite the high ionic mobility of Ag ions. Simulation results further show that Ag metal clusters can form in the AgI layer with intermediate-range order at least up to next-next nearest neighbors, suggesting that Ag can permeate into the AgI only in an aggregated form of metal crystallite.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2013

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Database coverage:
; ; ; ; BIOSIS Previews ; JCR ; NCBI Molecular Biology Database ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection ; Zoological Record

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