Journal Article

FZJ-2013-04859

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Self-catalyzed VLS grown InAs nanowires with twinning superlattices

Grap, T. (Corresponding author) ; Rieger, T.FZJ* ; Blömers, C.FZJ* ; Schäpers, T.FZJ* ; Grützmacher, D.FZJ* ; Lepsa, M. I.FZJ*

2013
IOP Publ. Bristol

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Please use a persistent id in citations: doi:10.1088/0957-4484/24/33/335601

Abstract: We report on the self-catalyzed growth of InAs nanowires by molecular beam epitaxy on GaAs substrates covered by a thin silicon oxide layer. Clear evidence is presented to demonstrate that, under our experimental conditions, the growth takes place by the vapor–liquid–solid (VLS) mechanism via an In droplet. The nanowire growth rate is controlled by the arsenic pressure while the diameter depends mainly on the In rate. The contact angle of the In droplet is smaller than that of the Ga droplet involved in the growth of GaAs nanowires, resulting in much lower growth rates. The crystal structure of the VLS grown InAs nanowires is zinc blende with regularly spaced rotational twins forming a twinning superlattice.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2013

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Database coverage:
; Current Contents - Life Sciences ; Current Contents - Physical, Chemical and Earth Sciences ; JCR ; NCBI Molecular Biology Database ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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