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| Hauptseite > Publikationsdatenbank > Defect structure of non-stoichiometric and aliovalently doped perovskite oxides |
| Hauptseite > Publikationsdatenbank > Defect structure of non-stoichiometric and aliovalently doped perovskite oxides |
| Journal Article | FZJ-2013-05520 |
; ;
2013
Elsevier
Amsterdam [u.a.]
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Please use a persistent id in citations: doi:10.1179/175355513X13715615193120
Abstract: Ferroelectric oxides are used in a large variety of modern technologies including sensors, transducers, actuators, thin film memories and energy harvesting devices. In that respect, one strategy to obtain tailored materials properties for a specific application is provided by systematically modifying the defect structure in terms of either aliovalent doping or nonstoichiometry. Recent advances in spectroscopic characterisation techniques combined with ab initio calculations have significantly contributed to the understanding of how defects impact the materials properties. This review provides an overview of recent results and lists still open questions to be addressed in future work.
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