Epitaxial growth of VO2 by periodic annealing

Tashman, J. W.; Merz, T. A.; Mundy, J. A.; Schiffer, P.; Lee, J. H.; Spila, T.; Schubert, J.; Moyer, J. A.; Misra, R.; Muller, D. A.; Schlom, D. G.; Paik, H.

doi:10.1063/1.4864404

Journal Article

FZJ-2014-01286

Epitaxial growth of VO2 by periodic annealing

Tashman, J. W. (Corresponding author) ; Lee, J. H. ; Paik, H. ; Moyer, J. A. ; Misra, R. ; Mundy, J. A. ; Spila, T. ; Merz, T. A. ; Schubert, J.FZJ* ; Muller, D. A. ; Schiffer, P. ; Schlom, D. G.

2014
American Institute of Physics Melville, NY

Applied physics letters 104(6), 063104 - (2014) [10.1063/1.4864404]

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Please use a persistent id in citations: http://hdl.handle.net/2128/17344 doi:10.1063/1.4864404

Abstract: We report the growth of ultrathin VO2 films on rutile TiO2 (001) substrates via reactivemolecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadiumand its subsequent oxidation and transformation to VO2 via solid-phase epitaxy. Significantmetal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance changeDR/R of 25 was measured. Low angle annular dark field scanning transmission electronmicroscopy was used in conjunction with electron energy loss spectroscopy to study thefilm/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusionto be limited to 1.6 nm.

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