Journal Article

FZJ-2014-02811

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Amphoteric Nature of Sn in CdS Nanowires

Zhang, M. (Corresponding Author) ; Wille, M. ; Röder, R. ; Heedt, S.FZJ* ; Huang, L. ; Zhu, Z. ; Geburt, S. ; Grützmacher, D.FZJ* ; Schäpers, T.FZJ* ; Ronning, C. ; Lu, J. G.

2014
ACS Publ. Washington, DC

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Please use a persistent id in citations: doi:10.1021/nl4035169

Abstract: High-quality CdS nanowires with uniform Sn doping were synthesized using a Sn-catalyzed chemical vapor deposition method. X-ray diffraction and transmission electron microscopy demonstrate the single crystalline wurtzite structure of the CdS/Sn nanowires. Both donor and acceptor levels, which originate from the amphoteric nature of Sn in II–VI semiconductors, are identified using low-temperature microphotoluminescence. This self-compensation effect was cross examined by gate modulation and temperature-dependent electrical transport measurement. They show an overall n-type behavior with relatively low carrier concentration and low carrier mobilities. Moreover, two different donor levels due to intrinsic and extrinsic doping could be distinguished. They agree well with both the electrical and optical data.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2014

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Database coverage:
; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection ; Zoological Record

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