Journal Article

FZJ-2014-03348

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Graphoepitaxial high-T$_{c}$ SQUIDS

Faley, M. (Corresponding Author)FZJ* ; Meertens, D.FZJ* ; Dunin-Borkowski, R.FZJ* ; Poppe, U.FZJ*

2014
IOP Publ. Bristol

Abstract: The fabrication process and physical properties of graphoepitaxially engineered high-Tc direct current superconducting quantum interferometer devices (DC SQUIDs) are studied. Double buffer layers, each comprising a graphoepitaxial seed layer of YBa2Cu3O7−x and an epitaxial blocking layer of SrTiO3, were deposited over textured step edges on (001) surfaces of MgO substrates. Scanning electron microscopy and high-resolution transmission electron microscopy were used to investigate the microstructural properties of DC SQUIDs with graphoepitaxial Josephson junctions. Both direct coupled and inductively coupled high-Tc DC SQUIDs with graphoepitaxial step edge junctions and flux transformers were studied.

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Contributing Institute(s):

1. Mikrostrukturforschung (PGI-5)

Research Program(s):

1. 423 - Sensorics and bioinspired systems (POF2-423) (POF2-423)

Appears in the scientific report 2014

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Database coverage:
; ; ; ; Nationallizenz ; SCOPUS

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