Journal Article

FZJ-2014-05877

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Particular Transport Properties of NiFe 2 O 4 Thin Films at High Temperatures

Solís, C. ; Somacescu, S. ; Palafox, E. ; Balaguer, M.FZJ* ; Serra, J. M. (Corresponding Author)

2014
Soc. Washington, DC

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Please use a persistent id in citations: doi:10.1021/jp506938k

Abstract: NiFe2O4 (NFO) thin films were deposited on quartz substrates by rf magnetron sputtering, and the influence of the deposition conditions on their physic-chemical properties was studied. The films structure and the high temperature transport properties were analyzed as a function of the deposition temperature. The analysis of the total conductivity up to 800 °C in different pO2 containing atmospheres showed a distinct electronic behavior of the films with regard to the bulk NFO material. Indeed, the thin films exhibit p-type electronic conductivity, while the bulk material is known to be a prevailing n-type electronic conductor. This difference is ascribed to the dissimilar concentration of Ni3+ in the thin films, as revealed by XPS analysis at room temperature. The bulk material with a low concentration of Ni3+ (Ni3+/Ni2+ ratio of 0.20) shows the expected n-type electronic conduction via electron hopping between Fe3+–Fe2+. On the other hand, the NFO thin films annealed at 800 °C exhibit a Ni3+/Ni2+ ratio of 0.42 and show p-type conduction via hole hopping between Ni3+–Ni2+.

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Contributing Institute(s):

1. Werkstoffsynthese und Herstellungsverfahren (IEK-1)

Research Program(s):

1. 122 - Power Plants (POF2-122) (POF2-122)

Appears in the scientific report 2014

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Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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