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| Hauptseite > Publikationsdatenbank > MBE growth optimization of topological insulator Bi2Te3 films |
| Hauptseite > Publikationsdatenbank > MBE growth optimization of topological insulator Bi2Te3 films |
| Journal Article | PreJuSER-17485 |
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2011
Elsevier
Amsterdam [u.a.]
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Please use a persistent id in citations: doi:10.1016/j.jcrysgro.2011.03.008
Abstract: We investigated the growth of the topological insulator Bi2Te3 on Si(1 1 1) substrates by means of molecular-beam epitaxy (MBE). The substrate temperature as well as the Bi and Te beam-equivalent pressure (BEP) was varied in a large range. The structure and morphology of the layers were studied using X-ray diffraction (XRD), X-ray reflectivity (XRR) and atomic force microscopy (AFM). The layer-by-layer growth mode with quintuple layer (QL) as an unit is accomplished on large plateaus if the MBE growth takes place in a Te overpressure. At carefully optimized MBE growth parameters, we obtained atomically smooth, single-crystal Bi2Te3 with large area single QL covering about 75% of the layer surface. Angular-resolved photoelectron spectroscopy reveals a linear energy dispersion of charge carriers at the surface, evidencing topologically insulating properties of the Bi2Te3 epilayers. (C) 2011 Elsevier B.V. All rights reserved.
Keyword(s): J ; Atomic force microscopy (auto) ; Crystal structure (auto) ; X-ray diffraction (auto) ; Molecular beam epitaxy (auto) ; Bismuth compounds (auto) ; Topological insulator (auto)
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